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Effect of growth conditions on optical properties of CdSe/ZnSe single quantum dots

机译:生长条件对Cdse / Znse单晶光学性质的影响   量子点

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摘要

In this work, we have investigated the optical properties of two samples ofCdSe quantum dots by using submicro-photoluminescence spectroscopy. The effectof vicinal-surface GaAs substrates on their properties has been also assessed.The thinner sample, grown on a substrate with vicinal surface, includes onlydots with a diameter of less than 10 nm (type A islands). Islands of an averagediameter of about 16 nm (type B islands) that are related to a phase transitionvia a Stranski-Krastanow growth process are also distributed in the thickersample grown on an oriented substrate. We have studied the evolution oflineshapes of PL spectra for these two samples by improving spatial resolutionthat was achieved using nanoapertures or mesa structures. It was found that theuse of a substrate with the vicinal surface leads to the suppression ofexcitonic PL emitted from a wetting layer.
机译:在这项工作中,我们使用亚微光致发光光谱学研究了两个CdSe量子点样品的光学性质。还评估了邻近表面GaAs衬底对其性能的影响。在具有邻近表面的衬底上生长的较薄样品仅包含直径小于10 nm的点(A型岛)。与通过Stranski-Krastanow生长过程进行相变有关的平均直径约16 nm的岛(B型岛)也分布在定向基质上生长的较厚样品中。我们已经研究了通过提高使用纳米孔或台面结构实现的空间分辨率,对这两个样品的PL光谱线形的演变。已经发现,使用具有邻近表面的基板可以抑制从润湿层发出的激子PL。

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